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1. product profile 1.1 general description a 300 w ldmos rf power transistor for broadc ast applications and industrial, scientific and medical applications in the hf to 500 mhz band. 1.2 features and benefits ? typical cw performance at frequency of 225 mhz, a supply voltage of 50 v and an i dq of 900 ma: ? average output power = 300 w ? power gain = 27.2 db ? efficiency = 70 % ? easy power control ? integrated esd protection ? excellent ruggedness ? high efficiency ? excellent thermal stability ? designed for broadband operation (hf and vhf band) ? compliant to directive 2002/ 95/ec, regarding restriction of hazardous substances (rohs) 1.3 applications ? industrial, scientific and medical applications ? broadcast transmitter applications blf573; BLF573S hf / vhf power ldmos transistor rev. 3 ? 8 july 2010 product data sheet table 1. production test information mode of operation f v ds p l g p d (mhz) (v) (w) (db) (%) cw 225 50 300 27.2 70 caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 2 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 2. pinning information [1] connected to flange. 3. ordering information 4. limiting values 5. thermal characteristics [1] r th(j-c) is measured under rf conditions. table 2. pinning pin description simplified outline graphic symbol blf573 (sot502a) 1drain 2gate 3source [1] BLF573S (sot502b) 1drain 2gate 3source [1] 3 2 1 sym11 2 1 3 2 3 2 1 sym11 2 1 3 2 table 3. ordering information type number package name description version blf573 - flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502a BLF573S - earless flanged ldmost ceramic package, 2 leads sot502b table 4. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage - 110 v v gs gate-source voltage ? 0.5 +11 v i d drain current - 42 a t stg storage temperature ? 65 +150 c t j junction temperature - 225 c table 5. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case t case =80 c; p l =300w [1] 0.21 k/w
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 3 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 6. characteristics table 6. dc characteristics t j = 25 c unless otherwise specified. symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0v; i d =3.75ma 110 - - v v gs(th) gate-source threshold voltage v ds =10 v; i d = 375 ma 1.25 1.7 2.25 v v gsq gate-source quiescent voltage v ds =50 v; i d = 900 ma 1.45 1.95 2.45 v i dss drain leakage current v gs =0v; v ds =50v - - 4.2 a i dsx drain cut-off current v gs =v gs(th) +3.75 v; v ds =10v 44 56 - a i gss gate leakage current v gs =11v; v ds = 0 v - - 420 na g fs forward transconductance v ds =10v; i d = 18.75 a - 20 - s r ds(on) drain-source on-state resistance v gs =v gs(th) + 3.75 v; i d = 12.49 a -0.09- c rs feedback capacitance v gs =0v; v ds =50v; f=1mhz -2.3-pf c iss input capacitance v gs =0v; v ds =50v; f=1mhz - 300 - pf c oss output capacitance v gs =0v; v ds =50v; f=1mhz - 103 - pf table 7. rf characteristics mode of operation: cw; f = 225 mhz; rf performance at v ds =50v; i dq =900ma; t case = 25 c; unless otherwise specified; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l = 300 w 26 27.2 28.4 db rl in input return loss p l = 300 w 10 13 - db d drain efficiency p l = 300 w 67 70 - %
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 4 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 6.1 ruggedness in class-ab operation the blf573 and BLF573S are capable of withstanding a load mismatch corresponding to vswr = 13 : 1 through all phases under the following conditions: v ds =50v; i dq =900ma; p l = 300 w; f = 225 mhz. 7. application information 7.1 impedance information v gs = 0 v; f = 1 mhz. fig 1. output capacitance as a function of drain-source voltage; capacitance value without internal matching v ds (v) 050 40 20 30 10 001aaj141 400 200 600 800 c oss (pf) 0 table 8. typical impedance measured z s and z l test circuit impedances. f z s z l mhz 225 0.7 + j2.0 1.95 + j2.0 fig 2. definition of transistor impedance 001aaf05 9 drain z l z s gate
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 5 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 7.2 reliability ttf (0.1 % failure fraction). (1) t j = 100 c (2) t j = 110 c (3) t j = 120 c (4) t j = 130 c (5) t j = 140 c (6) t j = 150 c (7) t j = 160 c (8) t j = 170 c (9) t j = 180 c (10) t j = 190 c (11) t j = 200 c fig 3. blf573 and BLF573S electromigration (i d , total device) 001aaj142 10 2 10 10 4 10 3 10 5 years 1 i dc (a) 0 20 16 812 4 (7) (8) (9) (10) (1) (2) (3) (4) (5) (6) (11)
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 6 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 8. test information 8.1 rf performance the following figures are measured in a class-ab production test circuit. 8.1.1 1-tone cw v ds = 50 v; i dq = 900 ma; f = 225 mhz. v ds = 50 v; f = 225 mhz. (1) i dq = 500 ma (2) i dq = 700 ma (3) i dq = 900 ma (4) i dq = 1100 ma (5) i dq = 1300 ma (6) i dq = 1500 ma (7) i dq = 1700 ma fig 4. power gain and drain efficiency as functions of load power; typical values fig 5. power gain as function of load power; typical values p l (w) 0 400 300 100 200 g p 001aaj612 26 24 28 30 g p (db) d (%) 22 40 20 60 80 0 d p l (w) 0 400 300 100 200 001aaj613 26 24 28 30 g p (db) 22 (7) (6) (5) (2) (3) (4) (1)
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 7 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor v ds = 50 v; i dq = 900 ma; f = 225 mhz. (1) p l(1db) = 55.2 dbm (330 w) (2) p l(3db) = 55.8 dbm (380 w) fig 6. load power as function of input power; typical values p i (dbm) 24 34 32 28 30 26 001aaj614 54 56 52 58 60 p l (dbm) 50 ideal p l p l (1) (2)
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 8 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 8.1.2 2-tone cw 8.2 test circuit v ds = 50 v; i dq = 900 ma; f 1 = 224.95 mhz; f 2 = 225.05 mhz. v ds = 50 v; f 1 = 224.95 mhz; f 2 = 225.05 mhz. (1) i dq = 500 ma (2) i dq = 700 ma (3) i dq = 900 ma (4) i dq = 1100 ma (5) i dq = 1300 ma (6) i dq = 1500 ma (7) i dq = 1700 ma (8) i dq = 1800 ma fig 7. power gain and drain efficiency as functions of peak envelope load power; typical values fig 8. third order intermodulation distortion as a function of peak envelope load power; typical values p l(pep) (w) 0 500 400 200 300 100 001aaj615 26 24 28 30 g p (db) d (%) 22 40 20 60 80 0 g p d p l(pep) (w) 0 500 400 200 300 100 001aaj616 ? 40 ? 60 ? 20 0 imd3 (dbc) ? 80 (4) (5) (8) (7) (6) (3) (2) (1) table 9. list of components for production test circuit, see figure 9 and figure 10 . printed-circuit board (pcb): rogers 5880; r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m. component description value remarks b1 ferrite smd bead 100 ; 100 mhz ferroxcube bds3/3/8.9-4s2 or equivalent c1, c18 multilayer ceramic chip capacitor 100 pf [1] c2 multilayer ceramic chip capacitor 39 pf [1] c3, c4 multilayer ceramic chip capacitor 180 pf [1] c5, c6, c7 multilayer ceramic chip capacitor 220 pf [1] c8, c20 multilayer ceramic chip capacitor 1 nf [1] c9 multilayer ceramic chip capacitor 4.7 f tdk c4532x7r1e475mt020u or equivalent c10 multilayer ceramic chip capacitor 30 pf [1] c11, c12, c13 multilayer ceramic chip capacitor 51 pf [1] c14 multilayer ceramic chip capacitor 43 pf [1]
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 9 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor [1] american technical ceramics type 100b or capacitor of same quality. c15 multilayer ceramic chip capacitor 33 pf [1] c16 multilayer ceramic chip capacitor 36 pf [1] c17 multilayer ceramic chip capacitor 16 pf [1] c19 electrolytic capacitor 220 f; 63 v l1 2 turns enamelled copper wire d = 3 mm; d=1mm; length = 2 mm; leads = 2 6mm l2 4 turns enamelled copper wire d = 2 mm; d=1mm; length = 13 mm; leads = 2 5mm l3 stripline - (l w) 96 mm 3mm l4, l5 stripline - (l w) 15 mm 8mm l6 stripline - (l w) 105 mm 6mm l7 stripline - (l w) 3 mm 6mm l8 stripline - (l w) 12 mm 6mm r1 metal film resistor 100 ; 0.6 w table 9. list of components ?continued for production test circuit, see figure 9 and figure 10 . printed-circuit board (pcb): rogers 5880; r = 2.2 f/m; height = 0.79 mm; cu (top/bottom metallization); thickness copper plating = 35 m. component description value remarks fig 9. class-ab common-source production test circuit 001aaj14 8 c8 c1 c20 c10 c16 c18 c19 r1 l1 l2 l7 l8 l5 l4 l3 l6 c3 c7 c4 c15 c17 c2 c5 c6 b1 c9 v gg v dd c11 c12 c13 c14 input 50 output 50
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 10 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor fig 10. component layout for class-ab production test circuit 001aaj14 9 c4 c3 c7 c9 c8 r1 c20 l1 c10 c11 c12 c13 b1 c19 c15 c16 c17 l2 c18 c14 c6 c5 c1 c2
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 11 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 9. package outline fig 11. package outline sot502a references outline version european projection issue date iec jedec jeita sot502a 99-12-28 03-01-10 0 5 10 mm scale flanged ldmost ceramic package; 2 mounting holes; 2 leads sot502 a p l a f b d u 2 h q c 1 3 2 d 1 e a c q u 1 c b e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 0.51 27.94 qw 2 w 1 f 1.14 0.89 u 1 34.16 33.91 l 5.33 4.32 p 3.38 3.12 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.01 0.02 1.100 0.045 0.035 1.345 1.335 0.210 0.170 0.133 0.123 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions) w 1 ab m m m
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 12 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor fig 12. package outline sot502b references outline version european projection issue date iec jedec jeita sot502b 03-01-10 07-05-09 0 5 10 mm scale earless flanged ldmost ceramic package; 2 leads sot502 b a f b d u 2 l h q c 1 3 2 d 1 e d u 1 d e 1 m m w 2 unit a mm d b 12.83 12.57 0.15 0.08 20.02 19.61 9.53 9.25 19.94 18.92 9.91 9.65 4.72 3.43 c u 2 0.25 w 2 f 1.14 0.89 u 1 20.70 20.45 l 5.33 4.32 q 1.70 1.45 ee 1 9.50 9.30 inches 0.505 0.495 0.006 0.003 0.788 0.772 d 1 19.96 19.66 0.786 0.774 0.375 0.364 0.785 0.745 0.390 0.380 0.186 0.135 0.010 0.045 0.035 0.815 0.805 0.210 0.170 0.067 0.057 0.374 0.366 h dimensions (millimetre dimensions are derived from the original inch dimensions)
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 13 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 10. abbreviations 11. revision history table 10. abbreviations acronym description cw continuous wave edge enhanced data rates for gsm evolution gsm global system for mobile communications hf high frequency ldmos laterally diffused metal-oxide semiconductor ldmost laterally diffused metal-oxide semiconductor transistor rf radio frequency smd surface mount device ttf time to failure vhf very high frequency vswr voltage standing-wave ratio table 11. revision history document id release date data sheet status change notice supersedes blf573_BLF573S v.3 20100708 product data sheet - BLF573S v.2 modifications: ? the document now describes both the eare d and earless version of this product: blf573 and BLF573S respectively. BLF573S v.2 20090217 product data sheet - BLF573S v.1 BLF573S v.1 20081208 preliminary data sheet - -
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 14 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor 12. legal information 12.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 12.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 12.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
blf573_BLF573S all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 3 ? 8 july 2010 15 of 16 nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 12.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 13. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors blf573; BLF573S hf / vhf power ldmos transistor ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 8 july 2010 document identifier: blf573_BLF573S please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 ruggedness in class-ab operation . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 4 7.1 impedance information . . . . . . . . . . . . . . . . . . . 4 7.2 reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1 rf performance . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1.1 1-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8.1.2 2-tone cw . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.2 test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 12 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 12.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 12.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 12.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 13 contact information. . . . . . . . . . . . . . . . . . . . . 15 14 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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